People

Dr. M.V. Ramana Murty
Alumni

    Research: Nanoelectronics
    Postal Code: E20 Communications - Calabasas, CA
    Web Page:

Publications and Presentations:

Role of energetic flux in low temperature Si epitaxy on dihydride-terminated Si(001)
Maggie E. Taylor, Harry A. Atwater, M. V. Ramana Murty
Thin Solid Films (1998)
Silicon epitaxy on hydrogen-terminated Si(001) surfaces using thermal and energetic beams
M. V. Ramana Murty and Harry A. Atwater
Surface Science (1997)
Empirical interatomic potential for Si-H interactions
M. V. Ramana Murty and Harry A. Atwater
Physical Review B (1995)
Crystal-state - amorphous-state transition in low-temperature silicon homoepitaxy
M. V. Ramana Murty and Harry A. Atwater
Physical Review B (1994)
Very low temperature (<400C) silicon molecular beam epitaxy: The role of low energy ion irradiation
M. V. Ramana Murty, Harry A. Atwater, A. J. Kellock, and J. E. E. Baglin
Applied Physics Letters (1993)
Defect generation and morphology of (001) Si surfaces during low-energy Ar-ion bombardment
M. V. Ramana Murty and Harry A. Atwater
Physical Review B (1992)